? 2005 ixys all rights reserved 1 - 2 0540 advanced technical information ixys reserves the right to change limits, test conditions and dimensions. mwi 60-06 g6k features ? igbts - low saturation voltage - fast switching - short tail current for optimized performance also in resonant circuits hiperfred tm diode: - fast reverse recovery - low operating forward voltage - low leakage current industry standard package - solderable pins for pcb mounting - isolated copper base plate ul registered e72873 typical applications ac drives igbts symbol conditions maximum ratings v ces t vj = 25c to 150c 600 v v ges 20 v i c25 t c = 25c 60 a i c80 t c = 80c 41 a i cm v ge = 15 v; r g = 10 ? ; t vj = 125c 80 a v cek rbsoa; clamped inductive load; l = 100 h v ces p tot t c = 25c 180 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v ce(sat) i c = 30 a; v ge = 15 v; t vj = 25c 2.3 2.8 v t vj = 125c 2.0 v v ge(th) i c = 0.25 ma; v ge = v ce 35v i ces v ce = v ces ; v ge = 0 v; t vj = 25c 0.2 ma t vj = 125c 1.2 ma i ges v ce = 0 v; v ge = 20 v 100 na t d(on) 20 ns t r 20 ns t d(off) 130 ns t f 80 ns e on 0.6 mj e off 0.5 mj c ies v ce = 25 v; v ge = 0 v; f = 1 mhz 2500 pf q gon v ce = 300 v; v ge = 15 v; i c = 30 a 95 nc r thjc (per igbt) 0.7 k/w r thch 0.25 k/w inductive load, t vj = 125c v ce = 400 v; i c = 30 a v ge = 15 v; r g = 3 ? i c25 = 60 a v ces = 600 v v ce(sat) typ. = 2.3 v igbt module sixpack square rbsoa 10, 23 9, 24 14 13 6 5 4 3 22 21 2 1 18 17 15, 16 11, 12 19, 20 8 7 ntc
? 2005 ixys all rights reserved 2 - 2 0540 advanced technical information ixys reserves the right to change limits, test conditions and dimensions. mwi 60-06 g6k equivalent circuits for simulation conduction igbt (typ. at v ge = 15 v; t j = 125c) v 0 = 1.1 v; r 0 = 21.5 m ? free wheeling diode (typ. at t j = 125c) v 0 = 1.20 v; r 0 = 19 m ? thermal response igbt (typ.) c th1 = tbd j/k; r th1 = tbd k/w c th2 = tbd j/k; r th2 = tbd k/w free wheeling diode (typ.) c th1 = tbd j/k; r th1 = tbd k/w c th2 = tbd j/k; r th2 = tbd k/w module symbol conditions maximum ratings t vj operating -40...+125 c t vjm -40...+150 c t stg -40...+125 c v isol i isol 1 ma; 50/60 hz 2500 v~ m d mounting torque (m4) 2.0 - 2.2 nm symbol conditions characteristic values min. typ. max. d s creepage distance on surface 12.7 mm d a strike distance in air 12.7 mm weight 40 g diodes symbol conditions maximum ratings i f25 t c = 25c 48 a i f80 t c = 80c 33 a symbol conditions characteristic values min. typ. max. v f i f = 30 a; v ge = 0 v; t vj = 25c 2.2 2.6 v t vj = 125c 1.7 v i rm 5a t rr 65 ns r thjc (per diode) 0.9 k/w r thch 0.3 k/w i f = 30 a; di f /dt = -400 a/s; t vj = 100c v r = 300 v; v ge = 0 v temperature sensor ntc symbol conditions characteristic values min. typ. max. r 25 t = 25c 4.45 4.7 5.0 k ? b 25/85 3510 k dimensions in mm (1 mm = 0.0394")
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